型号 IPD80N04S3-06
厂商 Infineon Technologies
描述 MOSFET N-CH 40V 90A TO252-3
IPD80N04S3-06 PDF
代理商 IPD80N04S3-06
产品目录绘图 Mosfets TO-252-3-11, TO-252-3
标准包装 2,500
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 40V
电流 - 连续漏极(Id) @ 25° C 90A
开态Rds(最大)@ Id, Vgs @ 25° C 5.2 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大) 4V @ 52µA
闸电荷(Qg) @ Vgs 47nC @ 10V
输入电容 (Ciss) @ Vds 3250pF @ 25V
功率 - 最大 100W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 带卷 (TR)
产品目录页面 1616 (CN2011-ZH PDF)
其它名称 IPD80N04S3-06-ND
IPD80N04S3-06TR
SP000261220
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